oxide semiconductor

FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor ( CMOS ).

FPGA使用的材料是互补式金属氧化物半导体 ( CMOS ) 技术,这是种随处可见的电晶体技术.

The invention discloses a method for manufacturing a complementary metal oxide semiconductor ( CMOS ) transistor.

本发明公开了一种互补式金属氧化物半导体 ( CMOS ) 晶体管的制作方法.

Research of Vehicle Noxious Gas Detection Basing on Metal Oxide Semiconductor Sensor

基于金属氧化物气体传感器的车内有害气体检测研究

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

Phthalocyanine and oxide semiconductor sensitive materials used for NO 2 sensors in recent ten year are described.

描述了近十年来用作NO2气体传感器的酞菁类和氧化物半导体敏感材料.

The present invention reveals a method for producing straining silicon complementary metal oxide semiconductor transistor.

本发明揭示了一种制作应变硅互补金属氧化物半导体晶体管的方法.

The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.

研究了一种氧化物 半导体型 氧敏元件的氧敏特性.